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The model which ascribes the deviation from ideality of the behavior of almost ideal silicon junction diodes to a current due to donor-acceptor twins is (1) substained by the analysis of the reverse current-voltage characteristics of diodes with different substrate concentrations, and (2) extended to take into account the spatial variation of the electric field in the depletion layer.
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Cerofolini et al. (1984) studied this question.
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