Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour deposition

ZnO thin films were deposited on (001) Si substrate by low-pressure metalorganic chemical vapour deposition. Thermal annealing was performed at 800 °C in air for an hour. The effects of annealing on the surface morphology, stoichiometric ratio, structural and optical properties of ZnO films were investigated using scanning electron microscopy, x-ray photoemission spectroscopy (XPS), x-ray diffraction, Raman spectra and photoluminescence spectra. The resistivity of ZnO film increased to 1.25 × 10 2 Ω cm after annealing. It was found that the quality of ZnO film could be improved through annealing.