High-quality ZnO nanocrystals have been fabricated by zinc ion implantation (160 keV, 1×1017 ions/cm2) into a CaF2(111) single-crystal substrate followed by thermal annealing from 300 to 700 °C. X-ray diffraction results show that ZnO nanocrystals in CaF2(111) substrate have a (002) preferred orientation. The average grain size is ranging from 14 to 19 nm corresponding to the annealing temperatures from 500 to 700 °C. A very strong ultraviolet near-band edge emission is observed from 372 to 379 nm. The emission intensity is enhanced and linewidth is narrowed as the annealing temperature increases. The commonly observed visible green emission associated with deep-level defects in ZnO is suppressed.
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Liu et al. (2003) studied this question.
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