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Analytic functions have been derived for the potential energy surfaces of the ground states of HCN (HNC) and HSiN(HNSi) using a combination of spectroscopic data and ab initio calculations. The potentials derived give no barrier to the approach of H to CN at any angle, but there is a barrier when H approaches SiN, this being larger at the Si end.
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Murrell et al. (1978) studied this question.
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