Random telegraph signals arising from fast interface states in metal-SiO2-Si transistors

Using fast sampling rates, we have been able to resolve random telegraph signals (RTSs) associated with trapping-detrapping of channel electrons by individual fast interface states in small metal-SiO2-Si transistors. Possible reasons why such fast RTSs have not been reported in the past are suggested. Some characteristics of the RTSs arising from fast interface states are presented and compared with those from the slow traps.