II–VI multilayer structures are eminently suitable for various optoelectronic devices covering from the infrared to the ultraviolet spectral range. We present a theoretical study of the band lineups at interfaces involving ZnS, ZnSe, ZnTe, CdTe, and HgTe based on the ‘‘model solid’’ theory. We also experimentally investigate the strains and band offsets in ZnSe/ZnSx Se1−x strained-layer superlattices, using Raman and photoluminescence spectroscopy. The conduction-band offset at such interfaces is found to be small. Theoretical predictions for other interfaces include a large type-II offset in ZnSe/ZnTe, and a small average valence-band discontinuity in ZnTe/CdTe.
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Walle et al. (1988) studied this question.