Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can be achieved, without increasing the a-Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a-Si:H TFT and OLED experimental data, showed that a data-to-OLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit.
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Lin et al. (2005) studied this question.
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