Semiconducting MnSi1.7 has been investigated by ellipsometric as well as reflectance and transmittance measurements. The interband dielectric functions of epitaxial films on Si(001) and polycrystalline films have been determined. Below the lowest direct transition at 0.96 eV, an indirect gap of 0.40 eV is obtained. The optical properties of the native oxide of MnSi1.7 are found to closely resemble those of SiO2.
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Rebien et al. (2002) studied this question.
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