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Raman scattering is reported on anneal-stable a-Si films prepared by chemical-vapor deposition (CVD). In contrast to earlier work, substantial changes are observed in the phonon spectrum and Raman matrix elements relative to a-Si deposited by other techniques. The results indicate improved short-range order associated with a decrease in bond-angle fluctuations in CVD a-Si. While the CVD a-Si spectra are similar to those of glow discharge a-Si0.92H0.08, small differences suggest enhanced order in the H alloy. The results indicate that small changes in short-range order may appreciably modify the properties of a-Si.
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Kshirsagar et al. (1982) studied this question.
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