Angular distributions of sputtered atoms from SiO₂ and LiF single crystals were measured under the irradiation of 1MeV/u swift heavy ions. In contrast to the almost isotropic distribution of SiO₂, an additional jetlike component was observed for LiF. The total sputtering yield of SiO₂ ( ≈10²atoms/ion) can be reproduced by an extended inelastic thermal spike model, whereas the huge yield of LiF ( ≈10⁴atoms/ion) needs a substantial decrease of the sublimation energy to be described by the model.
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Toulemonde et al. (2002) studied this question.
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