We have studied a GaAs–AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe an ultimate fast and reversible decrease in the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off of the cavity is only limited by the cavity storage time of τcav=0.3 ps and not by intrinsic material parameters. Our results pave the way to supraterahertz switching rates for on-chip data modulation and real-time cavity quantum electrodynamics.
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Ctistis et al. (2011) studied this question.
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