Radiative Recombination Lifetimes in Laser-Excited Silicon

N.N. Winogradoff; Helmut Kessler

doi:10.1063/1.1754506

February 15, 1966Applied Physics Letters

Radiative Recombination Lifetimes in Laser-Excited Silicon

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation N. N. Winogradoff, H. K. Kessler; RADIATIVE RECOMBINATION LIFETIMES IN LASER‐EXCITED SILICON. Appl. Phys. Lett. 15 February 1966; 8 (4): 99–101. https://doi.org/10.1063/1.1754506 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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Winogradoff et al. (1966) studied this question.

synapsesocial.com/papers/6aa82486d35154b47a3116c2 https://doi.org/10.1063/1.1754506

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Radiative Recombination Lifetimes in Laser-Excited Silicon

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Radiative Recombination Lifetimes in Laser-Excited Silicon

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Cite This Study

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