Direct Resolution and Identification of the Sublattices in Compound Semiconductors by High-Resolution Transmission Electron Microscopy

We describe a technique capable of directly resolving and identifying the sublattices occupied by the different constituents of compound semiconductors, under conditions which allow simple interpretation of the images. We present experimental lattice images of InP, GaP, and GaAs, which are direct representations of the sample structure and allow the simultaneous resolution and identification of the sublattices for the first time. We thus establish that the technique is applicable to all zinc-blende semiconductor compounds