Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °C

Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al 2 O 3 . To improve the mechanical stability, Al 2 O 3 has been used as a buffer layer on the flexible substrate. The Al 2 O 3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.