Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory

In this letter, we have studied the temperature dependence of retention time of SiGe dot floating-gate flash memory with different tunnel oxide thicknesses, and compared the difference of the activation energy between them. The results showed that the electrons are stored in the deep trap states in semiconductor quantum dot floating gate after programing, and those states are localized at few hundred meV below the semiconductor conduction band.