A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately10⁴, a read window of about 2.5 V, and retention performance of greater than10⁴\ s. The analysis of the deviceI–Vcharacteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.