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Cu-SiCp composites made by the powder metallurgy method were investigated. To avoid the adverse effect of Cu-SiCp reaction, sintering was controlled at a reaction temperature less than 1032 K. Electroless plating was employed to deposit a copper film on SiCp powder before mixing with Cu powder in order to improve the bonding status between Cu and SiC particles during sintering. It was found that a continuous copper film could be deposited on SiCp by electroless copper plating, and a uniform distribution of SiCp in Cu matrix could be achieved after the sintering and extrusion process. The mechanical properties of Cu-SiCp composites with SiCp contents from 0.6 to 10 wt% were improved evidently, whereas electrical properties remained almost unchanged as compared with that of the pure copper counterpart. In the electrical discharge machining (EDM) test, the as-formed composite electrodes exhibited a character of lower electrode wear ratio, justifying its usage. The optimum conditions for EDM were Cu–2 wt% SiCp composite electrode operating with a pulse time of 150 μsec.
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Shu et al. (2001) studied this question.
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