Fabrication and electrical characterization of pyrrole–aniline copolymer-based Schottky diodes

In this work, pyrrole–aniline copolymer/p-Si structure has been fabricated by forming a thin organic copolymer film on a p-Si wafer. A good rectifying behavior was seen from the current–voltage ( I–V ) characteristics. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements using I–V , Cheung's, and modified Norde's function. The calculated barrier height values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers to the deviation from ideal diode characteristics. This deviation can be attributed to secondary mechanisms, which include interface dipoles due to interface doping or specific interface structure, as well as fabrication-induced defects at the interface. The energy distribution of interface-state density of the copolymer-based structure was determined, and the interface-state density was found to vary from 1.27 × 10 16 cm −2 eV −1 in (0.07 – E v ) eV to 2.45 × 10 15 cm −2 eV −1 in (0.52 – E v ) eV. Furthermore, these copolymers were characterized with UV–vis, FTIR techniques, and thermal analysis.