Epitaxial behavior of (Pb,Sr)TiO3 thin films on (110) NdGaO3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a-axis normal to the surface (a-axis growth), whereas a fast cooling leads to growth of c-axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.
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Lin et al. (2005) studied this question.
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