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February 27, 2014Journal of Applied Physics

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

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Authors

ZLZhi LiZhejiang Normal UniversityJKJunjie KangYork UniversityBWBo-Wei WangNational Taiwan University

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Li et al. (2014) studied this question.

synapsesocial.com/papers/6aa85f2bbe8d1201add80214https://doi.org/10.1063/1.4866815
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Carrier localization in InN/InGaN multiple-quantum wells with high In-content2012 · 20 citations
  2. 2Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy2000 · 94 citations
  3. 3Lateral redistribution of excitons in CdSe/ZnSe quantum dots2002 · 52 citations
  4. 4Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes2011 · 54 citations
  5. 5Investigation of fast and slow decays in InGaN/GaN quantum wells2011 · 53 citations