Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors

Phosphors Na5La(MoO4)4:xEu3+ and NaEu(MoO4)2 were prepared with a solid-state reaction technique. Their photoluminescent properties were investigated at room temperature. Bright red-light-emitting diodes were fabricated by coating the phosphors onto near-ultraviolet/violet-emitting InGaN chips, respectively. The diodes prepared with phosphor Na5Eu(MoO4)4 show appropriate CIE chromaticity coordinates (x=0.65,y=0.34) and exhibit more intensive red emission than that prepared with NaEu(MoO4)2, indicating that Na5Eu(MoO4)4 may be applied as an excellent red component for near-ultraviolet InGaN-based white diodes.