Hydrogen solubility in silicon and hydrogen defects present after quenching

Boron-doped silicon ((B) approximately 10 17 cm -3 ) was heated in H 2 gas at a temperature in the range 900<or=T<or=1300 degrees C and quenched to room temperature. Some of the dissolved hydrogen formed H-B pairs and the remainder (H h ), which was infrared inactive was released during anneals at T