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The influence of various factors controlling the recovery dynamics of the blocking property of silicon carbide diodes is comparatively analyzed. It is shown that the mechanism related to the large ratio of electron and hole mobilities in SiC is dominant. This mechanism results in the effect of ultrafast (subnanosecond) current break independently of the emitter efficiency asymmetry, which causes initial plasma inhomogeneity in the high-resistivity base. This effect can be observed during the recovery of silicon carbide diodes with a p -type base, while “soft” recovery is inherent only to diodes with an n -type base.
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Grekhov et al. (2003) studied this question.
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