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January 1, 2013Journal of Materials Chemistry C

Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

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RHRudolf C. HoffmannTechnical University of DarmstadtMKMareiki KaloumenosSHSilvio HeinschkeTechnical University of Darmstadt

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Hoffmann et al. (2013) studied this question.

synapsesocial.com/papers/6aa8c7d257fd01e647ef740bhttps://doi.org/10.1039/c3tc00841j
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