Photoresist containing Si, which works as a positive resist, was developed. The photoresist consists of an ortho ‐nitrobenzylether group and silyl moiety. Six polymers were newly synthesized and characterized. Quantum yields for model compounds of these polymers were around 0.2 and varied, depending on the ortho ‐nitrobenzylether structure. After exposure, the photoresist was developed with tetramethylammonium hydroxide solution in alcohol or NaOH in alcohol. Sensitivity depended on the structure of the polymers, prebake temperature, and developers. O 2 reactive ion etching durabilities for these polymers were about five to ten times greater than conventional cresol novolak resin resist.
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Hayase et al. (1987) studied this question.