Trimethylsilylmethyl methacrylate (SI) and methacrylic acid (MA) copolymerize with reactivity ratios of about one to give a material that has adequate aqueous‐base‐solubility and oxygen‐RIE resistance to serve as the top component of a bilevel resist system. A resin with a SI:MA ratio of 1.1:1 etches between and slower than hard‐baked HPR‐204, depending on the oxygen pressure in the reactor. Incorporation into P(SI:MA) of 20 w/o dinitrobenzyl cholate as a solution inhibitor results in a resist system that is capable of submicron resolution with a sensitivity of ∼0.2 J/cm 2 . Oxygen‐RIE pattern transfer into thick planarizing HPR‐204 is readily accomplished.
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Reichmanis et al. (1987) studied this question.