Use of a fast atom beam in ion microscopy (FABIM) for analysis of poorly conducting materials

A Cameca IMS3f ion microscope was modified to allow the analysis of poorly conducting materials. A neutralization chamber within the primary ion column constitutes a fast atom beam (FAB) source. The insertion of a thin metallic diaphragm between the sample and the sample holder minimizes the charge build‐up. With these simple and cheap modifications, it is possible to change instantaneously from ion to neutral beam excitation for the same analysed area. The characteristics of the primary neutral beam were evaluated and the analytical possibilities using positive and negative secondary ions were investigated on various poorly conducting materials (mineral, multilayered glass, organic). The unique advantages of combining FAB and Ion Microscopy (FABIM) are illustrated: imaging capability, low detection limit, mass spectra at low and high resolution and depth profiles on very small areas. Suggestions are proposed to improve the performance of this preliminary FABIM design.