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We report the component E⃑⊥ĉ of the pseudodielectric-function tensor ⟨ε(E)⟩=⟨ε1(E)⟩+i⟨ε2(E)⟩ of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.
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Choi et al. (2010) studied this question.
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