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June 25, 2015Chinese Physics B

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Guang Yu Hai Lu Chenfei Wu Lan-Feng Tang Dong Zhou Fangfang Ren Rong Zhang You-Liao Zheng Xiaoming Huang

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Abstract

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors*, Qian, Hui-Min, Yu, Guang, Lu, Hai, Wu, Chen-Fei, Tang, Lan-Feng, Zhou, Dong, Ren, Fang-Fang, Zhang, Rong, Zheng, You-Liao, Huang, Xiao-Ming

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Cite This Study

Yu et al. (2015) studied this question.

synapsesocial.com/papers/6aa8e0199f1973992770ee61 https://doi.org/10.1088/1674-1056/24/7/077307

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification applicationOriginal Research · 2011 · 74 citations
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4Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistorsOriginal Research · 2008 · 563 citations
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