Transient secondary photocurrent in a-Si: H is discussed with the use of a multiple trap model that takes into account recombination. Photocurrent decays as t^-β even when the recombination of extended-state electrons is taken into consideration, and β depends on the recombination rate. Excitation pulse width also affects the photocurrent decay, with decay being slow for long pulse widths. These features are confirmed by experiment.
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Kagawa et al. (1982) studied this question.
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