The Pt/BiFeO3(BFO)/(Ba,Sr)TiO3(BST)/Si metal-ferroelectric-insulator/Si (MFIS) structures were fabricated by rf-magnetron sputtering. The electric properties of the BFO ferroelectric film with BST insulating buffer on Si substrates were investigated. BST demonstrates excellent insulating properties on Si substrates. The MFIS structure exhibits clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of BFO. The maximum memory window of the MFIS is 3.86 V, which is a remarkable improvement in comparison with previously reported 0.8 V. Trapped charge and charge injection are found to initiate when the sweeping voltage is higher than 8 and 9 V, respectively.
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Yeh et al. (2008) studied this question.
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