Growth and fundamentals of bulkβ-Ga2O3single crystals

The rapid development of bulk β -Ga 2 O 3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (~ 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large β -Ga 2 O 3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β -Ga 2 O 3 crystals in bulk form. We then describe the various methods for producing bulk β -Ga 2 O 3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.