The rates of etching of α-C:H films by excimer laser radiation were determined in air and in vacuum. Two ablation mechanisms—chemical and physical—dominated in different energy density ranges. An analysis was made of the processes influencing the occurrence of chemical etching and limiting its rate. A comparison was made of the energy losses in the treatment of α-C:H films by cw and pulse-periodic laser radiation.
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Конов et al. (1991) studied this question.
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