A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low‐ k SiO 2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO 2 aerogel films having a thickness of 9500 Å, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n ‐heptane as a drying solvent.
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Kim et al. (2001) studied this question.
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