Ultra‐Fast Gallium Oxide Solar‐Blind Photodetector with Novel Thermal Pulse Treatment

Gallium oxide (Ga 2 O 3 ) emerges as a promising solar‐blind photodetector (SBPD) material if the “Response Speed (RS) dilemma” can be resolved. Devices with spatially segregated carrier generation and transport channels offer a potential solution but remain less available. This work introduces a novel thermal pulse treatment (TPT) method to achieve a vertically stratified crystalline structure and oxygen vacancies (V O ) throughout the Ga 2 O 3 film, validated through extensive characterizations. Technology Computer‐Aided Design (TCAD) simulations corroborated the critical role of V O stratification in enhancing the responsivity (R λ ) and response speed simultaneously. Consequently, the TPT‐processed SBPD exhibited exceptional performance, boasting a maximum R λ of 312.6 A W −1 and a faster decay time of 40 µs, respectively. Moreover, the corresponding SBPD chips show significant potential for applications in solar‐blind imaging, light trajectory tracking, and solar‐blind power meters. This work thus provides a viable strategy to address the “RS dilemma” common in most wide‐bandgap materials, showcasing excellent application value.