Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing

Hui Deng; Katsuyoshi Endo; Kazuya Yamamura

doi:10.1063/1.4821068

September 9, 2013Applied Physics Letters

Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing

View at Publisher

Ask AI

Bookmark

Share

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Hui Deng, Katsuyoshi Endo, Kazuya Yamamura; Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing. Appl. Phys. Lett. 9 September 2013; 103 (11): 111603. https://doi.org/10.1063/1.4821068 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Deng et al. (2013) studied this question.

synapsesocial.com/papers/6aa90533e29bd5f6edd29e38 https://doi.org/10.1063/1.4821068

View at Publisher

Ask AI

Bookmark

Share

Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing

Abstract

Discussion

Cite This Study

Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing

Abstract

Discussion

Cite This Study

Keep reading

More related papers

More from Applied Physics Letters

Keep reading

More related papers

More from Applied Physics Letters