Rectification without Injection at Metal-to-Semiconductor Contacts

This is the authors' abstract. We don't add key points for this paper.

A recent publication shows that extraction in the semiconductor bulk may occur for either direction of current flow through the same metal-to-semiconductor contact when an insulating layer separates the metal and the semiconductor and the field effect determines the surface barrier under the metal. It is shown here that strong rectification, whose direction depends only on the bulk type, may occur for such contacts to extrinsic, but not intrinsic, semiconductors. Thus, rectification, without injection, may occur at the metal-to-semiconductor contact for the two-carrier system.