Orientation control and ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 thin films prepared by rf magnetron sputtering with a LaNiO3 buffer layer

Highly (110)‐ and (100)‐oriented (Pb0.90La0.10)Ti0.975O3 (PLT) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) and SiO2/Si(100) substrates by rf magnetron sputtering with a LaNiO3 (LNO) buffer layer. The LNO buffer layer plays an important role in the orientation and ferroelectric properties of the PLT thin films. Highly (100)‐oriented PLT thin films deposited on the LNO/SiO2/Si(100) substrates are obtained at a low processing temperature of 500 °C. The ferroelectric properties of the PLT thin films with different orientations are discussed. Highly (100)‐oriented PLT thin films possess better ferroelec‐ tric properties, with higher remnant polarization (2Pr = 40.4 μC/cm2) and lower coercive field (2Ec = 201 kV/cm) than that of (110)‐oriented PLT thin films (2Pr = 22.4 μC/cm2, 2Ec = 246 kV/cm). The enhanced ferroelectric property is attributed to the different orientations of the PLT thin films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)