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December 16, 2002Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Growth-temperature dependence of the microstructure of ErAs islands in GaAs

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Authors

CKC. KadowInfineon Technologies (Germany)JJJ. A. JohnsonKKK. Kolstad

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Kadow et al. (2002) studied this question.

synapsesocial.com/papers/6aa915c025280296cf29a535https://doi.org/10.1116/1.1529653
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth and microstructure of self-assembled ErAs islands in GaAs2000 · 49 citations
  2. 2Electronic structure and conduction in a metal–semiconductor digital composite: ErAs:InGaAs2001 · 64 citations
  3. 3Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics1999 · 135 citations
  4. 4Growth of GaAs/ErAs/GaAs structures by migration-enhanced epitaxy1992 · 19 citations