Extremely high etch rates of InGaP and InP are observed as N 2 is added to BCl 3 discharges. The etch rates of ∼2.0 μm/min and ∼1.8 μm/min for InGaP and InP, respectively, are achieved at 100°C with 1000 W of electron cyclotron resonance power and −145 V self‐bias. Optical emission spectra show increases of intensities for Cl 2 + and Cl + emissions with the presence of N 2 in BCl 3 plasmas as well as an additional BN emission at 385.6 nm. This trend of increasing emission intensity is consistent with the increase of etching rate with BCl 3 / N 2 discharge. A low threshold current, 9.7 mA, InGaAs/GaAs/InGaP ridge lasers with a ridge width and cavity length of 1.4 and 750 μm, respectively, were also demonstrated with this etching processing.
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Ren et al. (1996) studied this question.