Chemical vapor deposition of nonstoichiometric hafnium carbide is studied by computer minimization of the Gibbs free energy of the system. Isostoichiometric curves in the HfC 1‐ x region of the deposition diagram are calculated as a function of HfCI 4 , CH 4 , and H 2 concentration and reaction temperature. Possible experimental reactions are investigated using thermodynamic efficiency and partial pressure diagrams. A comparison between the calculated solid‐phase regions and the HfC phase diagram is given, and experimental results for HfC whiskers are also compared with the calculations.
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Lackey et al. (1990) studied this question.