It has been demonstrated that the drain current DLTS is effective in characterizing the transient behavior of the normally‐off AlGaN/GaN HEMTs in which the conventional capacitance DLTS cannot be applied because the carriers in the channel are depleted in the normal bias condition. In the measurement, two bulk/interface‐related negative peaks and one surface‐state‐related positive peak were observed. Drain voltage dependence was also discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Mizutani et al. (2007) studied this question.