Calixarene G-line double resist process with 15 nm resolution and large area exposure capability

Methods for combining fast optical lithography and slower high-resolution calixarene electron-beam lithography are presented. These methods rely on dividing the pattern into low-resolution and high-resolution components and exposing each with optical and electron-beam lithography steps, respectively. Patterns produced in this way have a minimum linewidth of 15 nm, and arbitrarily large low-resolution features. Although the procedures take two steps, for many patterns the total exposure time is significantly lower then it would be with a single step calixarene-only process. The optical and electron-beam exposures were aligned using SiGe zero-level alignment marks. A 5 nm misalignment between subsequent electron beam exposures is demonstrated.