A GaN resonant cavity light emitting diode was built on a GaN/AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a semi-transparent metal contact design, and up to eight times for a flip-chip design.
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Mastro et al. (2007) studied this question.
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