External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor

Despite the intensive study on the famous metal–insulator transition, many questions regarding the evolution of the structural phase transition (SPT) in vanadium dioxide (VO 2 ) remain unresolved. Here, the lattice vibrations and SPT of VO 2 nanoparticles on a SiO 2 /Si(100) substrate with different applied voltage from 0 to 8 V have been investigated by Raman scattering spectra. It can be found that both the intensities of the A g and B g phonon modes decrease with increasing temperature. Moreover, the vibration modes disappear when heating up to the temperature of SPT ( T SPT ). With the voltage increasing from 0 to 8 V, the T SPT decreases from 68.3 to 64.3 °C for the heating process and from 66.3 to 58.8 °C for the cooling process, respectively. The fitting results reveal that the T SPT was decreased by −0.48 and −0.87 °C/V in the heating and cooling processes, respectively. This is because the larger electric field could assist the shortening of the V–V distance and the change of carriers between electrons and the mixing of electrons and holes. Moreover, the T SPT delay was increased by 0.4 °C/V with increasing the positive voltage because the electric field can pull the electrons and push the holes. The present results of the VO 2 three-terminal device show a potential realization of the VO 2 -based field effect transistor.