Characterization and Modeling of the Band-to-Band Current Variability of Nanoscale Device Junctions

This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion.