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High quality 940 nm Al x Ga 1-x As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology and reasonable periodicity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for larger scale production of AlGaAs-based VCSELs.
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Zhao et al. (2022) studied this question.
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