A GaAs-based high-index-contrast ridge waveguide laser is fabricated using a self-aligned process of deep dry etching plus oxygen-enhanced wet thermal oxidation of low Al-content AlGaAs. Lasers operating at λ=813 nm (CW, 300 K) with external differential quantum efficiencies as high as 78% are demonstrated, indicating effective passivation of the directly-oxidised etched active region sidewall surface.
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Liang et al. (2006) studied this question.
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