Oxygen adsorption on a Cs-monolayer-covered Si(100) surface has been studied by Li^- ion spectroscopy and normally emitted secondary electron emission (SEE) spectroscopy. It is clearly shown that the oxygen lies above and below the Cs atoms, respectively, at low and high O exposures, disproving the dipole model for the work function change. The initial O adsorption induces a shoulder at the low-energy edge of the SEE spectra, indicating the existence of patches of a lower work function on the surface. The patches are explained as due to the CsO* complexes formed by nonadiabatic chemisorption.
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Lu et al. (1996) studied this question.
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