The electrical resistivity of Cu/Mo multilayered films

Resistivity measurements on Cu/Mo multilayered films have been performed and the in-plane resistivities interpreted with a model based on the Boltzmann kinetic theory as derived by Dimmich (1985). Theoretical calculations are in excellent agreement with the experimental data at two different temperatures. On the basis of the Dimmich model, the conductivity of Cu/Mo multilayered films is shown to be governed by scattering at grain boundaries within layers as well as by scattering at interfaces between the Cu and Mo layers. The authors propose a new method to estimate the average in-plane grain sizes of Cu/Mo multilayer films as a function of the layer thickness. The effective mean free paths were also derived and found to be close to the estimated average in-plane grain sizes.